MTE7410 visible light emitting diode 2.electrical & optical characteristics (ta=25 ) symbol min typ max unit po 4.0 mw vf 1.8 2.3 v ir 100 a p 740 nm ? 30 nm 12 deg. tr ns tf ns cj 35 pf p/t -0.6 %/ v/t -1.9 mv/ anode cathode features ?high output power ?narrow beam angle ?high reliability applications ?optical switches ?optical sensors ?medical application 1. absolute maximum ratings (ta=25 ) symbol unit if ma ifp a vr v pd mw topr tstg tj tls *2:time 3 sec max,position:up to 2mm from the body *1:tw=10us,t=10ms ratings dimensions (unit:mm) 50 0.5 5 120 junction temp. 100 260 lead soldering temp.*2 -30 to 100 power dissipation operating temp. storage temp. if=10ma fall time junction capacitance -20 to 80 i t e m forward current (dc) forward current (pulse)*1 reverse voltage 1mhz ,v=0v i t e m power output forward voltage ifp=20ma conditions ifp=20ma vr=5v if=20ma if=20ma if=20ma if=20ma if=20ma temp. coefficient of vf if=10ma temp. coefficient of po reverse current peak wavelength spectral line half width half intensity beam angle rise time thermal derating curve 0 10 20 30 40 50 60 -30 0 30 60 90 ambient temperature( ) forward current(ma) forward i-v characteristics 0 10 20 30 40 50 60 0123 forward voltage(v) forward current(ma) power output vs temperature if=10ma 0 20 40 60 80 100 120 140 -30 0 30 60 90 ambient temperature( ) relative power output(%) spectral output 0 20 40 60 80 100 120 690 740 790 wavelength(nm) relative power output(%) radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 100 200 300 0 102030405060 forward current(ma) relative power output(%) forward voltage vs temperature if=10ma 0 0.5 1 1.5 2 2.5 3 -30 0 30 60 90 ambient temperature( ) forward voltage(v) to purchase this part contact marktech optoelectronics at 800.984.5337 optoelectronics www.marktechopto.com marktech
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